Technique |
Description |
Typical |
Signal Detected |
Resolution |
Imaging |
DMS |
Minimum |
|
SIMS |
Mass analysis surface and depth profiling |
Dopant or compositional element depth analysis |
Secondary Ions |
1e12 at/cm |
Yes |
No |
1 μm |
|
Quad-SIMS |
Thin Film and Shallow Implant Depth Profile |
Compositional element depth profile |
Secondary Ions |
1E16 at/cm |
No |
No |
50µm x 50µm raster |
|
TOF-SIMS |
Surface mass analysis |
Surface contamination |
Secondary Ions |
1e8 at/cm2 |
Yes |
Yes |
1 µm |
|
AES |
Elemental surface analysis |
Depth profiling with Ar sputter, surface contamination, cross-section analysis |
Auger electrons |
0.1-1 at% |
Yes |
Yes |
300 Å |
|
ESCA |
Elemental Surface analysis |
Depth profiling with Ar sputter, chemical state information, thin film composition analysis |
Photoelectrons |
0.1 at% |
No |
No |
10 μm |
|
XRD |
Crystal Orientation Analysis |
Grain size, orientation, and texture analysis |
Crytal plane d-spacing |
+/-.5% |
No |
No |
10 mm X 1mm |
|
XRR |
Reflectivity Analysis |
Density, Interface, Roughness, and Thickness of thin films |
Reflected X-rays |
+/- 3% of signals detected |
No |
No |
10mm x 50mm |
|
AFM |
Surface topography |
Roughness of thin films, and step height information |
Atomic morphology |
< 2 Å |
Yes |
Yes (Manual |
50 Å |
|
RAMAN |
Molecular composition |
Defect analysis, thin film monitoring |
Bond vibration frequencies |
Sample dependent |
Yes |
Yes |
100 nm |