Table of Analytical Imaging Techniques

Created by Dean Powers Last modified at May 12, 2009 7:59 PM

Technique	Description	Typical Applications	Instrument	Navigation Capability	Resolution	Minimum Spot Size	Maximum Sample Size
FE-SEM Field Emission Scanning Electron Microscopy	Scanning electron imaging to view samples at magnifications up to 500,000 times.	Metrology, construction analysis, defect analysis	Hitachi S5000, S4700, FEI XL50, XL30	Yes	6 Å	45 Å	Up to 200 mm wafer
EDX Energy Dispersive X-Ray Spectroscopy	Elemental analysis	Defect analysis, construction analysis	Noran Vantage System	Yes	120 eV	1 mm	Up to 200 mm wafer
BSE Back Scattered Electron Imaging	Contrast imaging of wafer cross section. Provides composition information	Process identification	Hitachi S5000, S4700	Yes	6 Å	45 Å	2-4 mm square sample
FIB Focused Ion Beam	Sample preparation technique using ion beam to mill into very specific area of interest.	Defect analysis, construction analysi	FEI XL830, XL835 Dual Beam systems	Yes	70 Å	na	Up to 200 mm wafer
TEM Transmission Electron Microscopy	Imaging of electrons transmitted through 100 nm thick speciman.	Construction analysis, crystal phase, lattice damage and grain orientation	JEOL 2010 Philips (FEI) CM300	Yes with FIB preparation	2 Å	10 Å	Up to 200 mm wafer using FIB preparation
Electron Energry Loss Spectroscopy/ Gatan Image Filtering	Elemental analysis on TEM sample.	Defect analysis, construction analysis	Gatan GIF-2002 Electron Energy Loss Spectrometer	Yes with FIB preparation	2 Å	10 Å	Up to 200 mm wafer using FIB preparation

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