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SIMS (Secondary Ion Mass Spectrometry)

Created by Dean Powers Last modified at May 12, 2009 8:04 PM
The magnetic SIMS instrument uses high energy beams (1KeV to 15KeV) with a high extraction field to provide fast sputter rate and high sensitivity depth profiling. Major applications are: trace element contamination analysis in the bulk film and surface; implant characterization; device dopant characterization with minimum size of 100umX100um; film composition analysis.