Raman spectroscopy is an inelastic light scattering technique that
measures the vibrational spectra of molecules and solids. The spectra
provide detailed information about the character of the chemical bonds.
Raman spectroscopy is typically used to identify contaminates or to
analyze solids such as polysilicon, metal silicides and strained
silicon. This technique is useful because it is non-destructive and
relatively quick. The lateral resolution of the incident beam is on the
order of 1 micron. However, the total collection volume depends on the
light scattering properties of the material being analyzed. For
example, the penetration depth in polysilicon is approximately 2000Å.
Our Raman spectrometer is coupled to a precision Leica INM200
microscope review station. This allows us to download defect maps from
inspection tools and drive to within microns of the defect on 200 mm
wafers.