Quadrupole SIMS

Quadrupole SIMS instruments use low extraction fields to extract secondary ions from the sample, allowing low energy ion bombardment – giving high depth resolution and analysis of ultra-shallow and very thin films. Also because of the low extraction fields of the Quad-SIMS instrument, it is easier to do charge compensation for the analysis of insulating material like SiO2 and Si3N4. We have developed protocols for H analysis in Si-R Nitrides, B & P concentrations in BPTEOS, and N concentration in Thin Oxynitrides, Ge concentration in SiGe samples with OCE (Optical Conductivity Enhancment). The full wafer Quad-SIMS instrument allows us to map wafers – looking for dose or profile shape variations across a wafer.