Focused Ion Beam (FIB) technology allows the capability to locally
sputter materials by milling a sample surface with a highly focused
beam of gallium ions. The ion beam is emitted from a liquid Ga ion
source. At high beam currents it can be used to locally deposit
conductors, insulators, or perform gas assisted etching techniques. At
low beam currents it can be used for ion imaging or cleanup of
amorphous damage.
FIB applications allow sub-micron precision and give rise to a number of useful applications. FIB systems are widely utilized for on-chip circuit modification, defect characterization (TEM/SEM/Auger sample preparation), voltage contrast analysis, micro-machining, and advanced circuit diagnostics for failure analysis.
KNIGHTS automated navigation software provides the ability to drive to specific sites for analysis by importing KLA, TENCOR, etc data files. Defects can be cross-sectioned or analyzed with EDS for elemental composition. KNIGHTS can also import circuit layout files for locating specific features and performing device modifications.
FIB systems integrated with Omniprobe provide in-situ lift-out for TEM sample preparation. This technique allows for a higher success rate on one-of-a-kind samples.
FIB applications allow sub-micron precision and give rise to a number of useful applications. FIB systems are widely utilized for on-chip circuit modification, defect characterization (TEM/SEM/Auger sample preparation), voltage contrast analysis, micro-machining, and advanced circuit diagnostics for failure analysis.
KNIGHTS automated navigation software provides the ability to drive to specific sites for analysis by importing KLA, TENCOR, etc data files. Defects can be cross-sectioned or analyzed with EDS for elemental composition. KNIGHTS can also import circuit layout files for locating specific features and performing device modifications.
FIB systems integrated with Omniprobe provide in-situ lift-out for TEM sample preparation. This technique allows for a higher success rate on one-of-a-kind samples.